I've been able to find how to calculate the recombination rate for semiconductors as a function of the type of semiconductor (like silicon), the doping material, the concentration of the excess carrier and resistivity, and the model for recombination. However, I don't know about the recombination rate calculation for a gaseous plasma. Can a similar relationship be used to calculate the recombination rate of plasma, where the electrons would be more excited? I suppose that would have to assume that the plasma would be a semiconductor, while generally atmospheric gases are considered insulators, but otherwise I was wondering what calculation you apply for plasma of say, neon or nitrogen (not sure if it differs for thermally or electrically dominated plasma).
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